2013. 9. 13 1/3 semiconductor technical data FM400CD1D5C revision no : 0 150v / 400a 2-pack mosfet module (common-drain) features h low r ds(on) h high frequency operation h dv/dt ruggedness h fast switching application h battery management system h electric vehicle, automotive etc. internal circuit characteristic symbol rating unit drain-to-source breakdown voltage v dss 150 v gate to source voltage v gss ? 30 v continuous drain current @t c =25 ? i d 650 a @t c =100 ? 450 pulsed drain current @t c =25 ? ; pulsed ; i dm 2500 a isolation voltage test ac@1minute v iso 2500 v junction temperature t j -40 q +150 ? storage temperature t stg -40 q +125 ? weight weight 365 ? 5 g mounting torque (m6) m 6 nm terminal connection torque (m6) m 5 nm 1 2 67 3 54 1. s22. d1/d2 3. s1 4. g15. s1 6. g2 7. s2 maximum rating (@tc=25 ? per leg, unless otherwise noted) outline drawing unit : mm + _ 15 0.3 m6 ?? 3 m6 ?? 4 2 1 3 6 7 54 + _ 19 0.3 93 0.5 + _ 108 0.5 + _ 28 0.3 + _ 28 0.3 + _ 79 0.3 + _ 14 0.3 + _ 14 0.3 + _ 14 0.3 + _ + _ 27 0.3 + _ 48 0.5 + _ 62 0.5 + _ 29 0.5 + _ 21 0.5 + _ 21 0.3 + _ 31 0.5 + _ 30 0.5 + _ 3 0.5 downloaded from: http:///
2013. 9. 13 2/3 FM400CD1D5C revision no : 0 electrical characteristics (@tc=25 ? per leg, unless otherwise noted) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 u , v gs =0v 150 - - v breakdown voltage temperature coefficient bv dss / t j i d =5ma, referenced to 25 ? - 0.17 - v/ ? gate threshold voltage v th v ds =v gs , i d =250 u 3.0 - 5.0 v drain to source leakage current i dss v ds =150v, v gs =0v - - 80 a v ds =150v, v gs =0v, t j =125 ? - - 1000 a gate to source leakage current i gss v gs =20v - - 400 na v gs =-20v - -400 na drain to source on resistance r ds(on) v gs =10v, i d =400a - 2.3 3.2 m ? dynamic total gate charge q g i d =400a, v ds =75v, v gs =10v - 600 - nc gate to source charge q gs - 200 - gate to source charge q gd - 220 - turn on delay time t d(on) v ds =75v, i d =400a, r g =3.3 ? - - 110 - ns rise time t r - 490 - turn off delay tine t d(off) - 180 - fall time t r - 310 - input capacitance c iss v ds =50v, v gs =0v, f=1 ? - 40 - output capacitance c oss - 4 - reverse transfer capacitance c rss - 0.8 - pf source-drain diode ratings continuous source current i s - - 450 a pulsed source current i sp - - 2500 a diode forward voltage v sd i d =400a, v gs =0v - 1.1 1.4 v reverse recovery time t rr v r =75v, i d =400a, di/dt = -100a/us - tbd - ns reverse recovery charge q rr - tbd - nc downloaded from: http:///
2013. 9. 13 3/3 FM400CD1D5C revision no : 0 6 temp [ ? ] r ds(on) [ ? ] 42 0 8 10 0 50 75 100 125 150 175 fig 3.r ds(on) characteristics i d = 400a common sourev gs =10v 200 v f [v] i f [a] 100 0 300 400 0 0.5 1 1.5 2 fig 4. forward characteristics of inverse diode tc = 125 ? tc = 25 ? 200 v ds [v] i d [a] 100 0 300 400 0 0.5 1 1.5 2 fig 1. saturation voltage characteristics 200 v ds [v] i d [a] 100 0 300 400 0 0.5 1 1.5 2 2.5 fig 2. saturation voltage characteristics common sourev gs =10v tc = 25 ? tc = 125 ? common source tc = 25 ? v gs = 15v v gs = 10v downloaded from: http:///
|
